usbq50403e3 C usbq50424 e3 compliant 500 w, uni directional low capacitance tvs a rray description this transient voltage suppressor (tvs) is assembled in a qfn - 143 package which has the same pinout and footprint as the sot - 143 package. the configuration gives protection to 1 unidirectional data or interface line. it is designed for use in applications where low capacitance protection is required at the board level from voltage transients caused by electrostatic discharge (esd) as defined in iec 61000 -4- 2, electrical fast transients (eft) per iec 61000 -4- 4 and the secondary effects of lightning . these tvs arrays have a peak power rating of 500 watts for an 8/20 s pulse (figure 1). with a capacitance of only 3 pf, this part can provide protection to very fast data lines including usb at 900 mbits/sec . qfn - 143 also available : bidirectional ( qfn - 143 ) usbq50403ce3 C usbq50424ce3 important: for the latest information, visit our website http://www.microsemi.com . features ? protects 1 uni directional line ? surge protection per iec 61000 -4- 2 and iec 61000 -4-4 ? ultra low capacita nce ? low profile surface mount package ? rohs compliant applications / benefits ? eia rs485 data rates: 5 mbps ? 10 base - t ethernet ? usb data rate 900 mbps maximum ratings @ 25 oc unless otherwise noted parameters/test conditions symbol value unit stora ge temperature t stg -5 5 to +1 50 o c junction temperature t j -5 5 to +1 25 o c peak pulse p ower d issipation with a 8/20 s waveform ( with a duty factor of 0.01% ) p pp 500 w solder temperature @ 10 s 260 o c msc C lawrence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com halogen free rf0 1086 -1 , rev b (6/ 17 /1 5) ?201 5 microsemi corporation page 1 of 5 downloaded from: http:///
usbq50403e3 C usbq50424 e3 mechanical and packaging ? case: void- free transfer molded thermosetting epoxy body meeting ul94v -0. ? terminals: rohs c ompliant annealed matte -t in plating . r eadily solderable per mil - std - 750, method 202 6. ? marking: body marked with part number code ( q xx) . ? polarity: dot in corner indicates pin 1 . ? tape- and -reel: standard per eia - 481 - b (add tr suffix to part number). consult factory for quantities. ? approximately 16.53 milligrams ? see p ackage d imensions on last page. part nomenclature usb q 5 04 03 e3 usb suitable q fn - 143 package 500 w p pp rating rohs complian t rated standoff voltage (v wm ) (see electric al characteristics table) 4 pin package symbols & definitions symbol definition v(br) temperature coefficient of breakdown voltage: the change in breakdown voltage divided by the change in temperature that caused it expressed in %/ c or mv/ c. i (br) breakdown current : the current used for measuring breakdown voltage v (br) . i d standby current: the current through the device at rated stand - off voltage. i pp peak impulse current: the maximum rated random recurring peak impulse current or nonrepet itive peak impulse current that may be applied to a device. a random recurring or nonrepetitive transient current is usual ly due to an external cause, and it is assumed that its effect will have completely disappeared b efore the next transient arrives. v (br) breakdown voltage: the voltage across the device at a specified current i (br) in the breakdown region. v c clamping voltage: the voltage across the device in a region of low differential resistance during the application of an impulse current (i pp ) for a specified waveform. v wm wo rking s tandoff v oltage: the maximum - rated value of dc or repetitive peak positive cathode - to - anode voltage that may be continuously applied over the standard operating temperature. electrical characteristics @ 25 oc u nless otherwise stated part number device marking stand - off voltage v wm volts breakdown voltage v br @ 1 ma volts clamping voltage v c @ 1 amp (figure 2) volts clamping voltage v c @ 5 amp (figure 2) volts standby current i d @ v wm a capacitance (f= 1 mh z) c @ 0 v pf temperature coefficient of v br vbr mv/c max min max max max max max usb q 50403e3 q 03 3.3 4 .0 8 .0 11 200 3 -5 usb q 5040 5 e3 q 05 5.0 6.0 10.8 12 40 3 1 usb q 50412e3 q 12 12.0 13.3 19 .0 26 1 3 8 usb q 50415e3 q 15 15.0 16.7 24 .0 32 1 3 11 usb q 50424e3 q 24 24.0 26.7 43 .0 57 1 3 28 rf0 1086 -1 , rev b (6/ 17 /1 5) ?201 5 microsemi corporation page 2 of 5 downloaded from: http:///
usbq50403e3 C usbq50424 e3 gra phs tp C pulse time C s figure 1 peak pulse power vs. pulse time t ime C s f igure 2 pulse waveform p pp C peak pulse power - w i pp peak pulse current - % i pp rf0 1086 -1 , rev b (6/ 17 /1 5) ?201 5 microsemi corporation page 3 of 5 downloaded from: http:///
usbq50403e3 C usbq50424 e3 package dimensions pa d layout see schematic on next page ref. dimensions inch millime ters min max min max a 0.112 0.116 2.85 2.95 b 0.096 0.100 2.45 2.55 c 0.0354 0.0366 0.900 0.930 d 0.020 0.024 0.50 0.60 e 0.031 nom 0.80 nom f 0.069 nom 1.75 nom g 0.018 nom 0.45 nom h 0.076 nom 1.92 nom ref. dimens ions inch millimeters nominal nominal a1 0.112 2.85 a2 0.079 2.00 a3 0.071 1.80 b1 0.108 2.75 b2 0.075 1.90 c 0.041 1.05 d 0.033 0.85 e 0.032 0.80 f 0.033 0.85 g 0.047 1.20 rf0 1086 -1 , rev b (6/ 17 /1 5) ?201 5 microsemi corporation page 4 of 5 downloaded from: http:///
usbq50403e3 C usbq50424 e3 schematic seen from above rf0 1086 -1 , rev b (6/ 17 /1 5) ?201 5 microsemi corporation page 5 of 5 downloaded from: http:///
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